The Most Thermally Conductive Material in the World

GaN-on-Diamond is an advanced semiconductor technology developed by Akash Systems. It involves transferring Gallium Nitride (GaN) thin films to a synthetic diamond substrate.

GaN-on-Diamond technology works by combining Gallium Nitride (GaN) with synthetic diamond. GaN is a high-performance semiconductor ideal for high-frequency and high-power applications. When GaN is transferred to a diamond substrate, the diamond's exceptional thermal conductivity efficiently dissipates heat. This combination enhances the performance, power handling, and thermal management of electronic devices, leading to smaller, more efficient systems with improved reliability and longevity.

GaN-on-Diamond significantly enhances device performance by improving thermal management. The superior thermal conductivity of diamond pulls heat away from device components quickly and efficiently, allowing devices to operate at higher power levels and more reliable conditions without overheating. This combination leverages diamond's exceptional thermal conductivity (1500+ W/mK), which is nearly four times that of traditional materials like copper or silicon carbide.

GaN-on-Diamond technology is considered safe and has several advantages, particularly in thermal management and efficiency in high-power, high-frequency applications. The use of synthetic diamond, which is biocompatible and non-toxic, combined with GaN, does not introduce significant safety concerns. However, like all semiconductor technologies, its safe use depends on proper handling and integration within devices.

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